2008. 3. 26 1/2 semiconductor technical data MJE13009 triple diffused npn transistor revision no : 1 switching regulator application. high voltage switching application. high speed dc-dc converter application. features excellent switching times : t on =1.1 s(max.), t f =0.7 s(max.), at i c =8a high collector voltage : v cbo =700v. maximum rating (ta=25 ) electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit emitter cut-off current i ebo v eb =9v, i c =0 - - 1 ma dc current gain h fe (1) (note) v ce =5v, i c =5a 14 - 28 h fe (2) v ce =5v, i c =8a 6 - - collector-emitter saturation voltage v ce(sat) i c =5a, i b =1a - - 1 v i c =8a, i b =1.6a - - 1.5 i c =12a, i b =3a - - 3 base-emitter saturation voltage v be(sat) i c =5a, i b =1a - - 1.5 v i c =8a, i b =1.6a - - 1.6 collector output capacitance c ob v cb =10v, f=0.1mhz, i e =0 - 180 - pf transition frequency f t v ce =10v, i c =0.5a 4 - - mhz turn-on time t on i b1 15? b1 i cc v =125v i b2 i b2 300 s i =i =1.6a 2% b1 b2 output duty cycle input < = - - 1.1 s storage time t stg - - 3 s fall time t f - - 0.7 s characteristic symbol rating unit collector-base voltage v cbo 700 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 9 v collector current dc i c 12 a pulse i cp 24 base current i b 6 a collector power dissipation (tc=25 ) p c 100 w junction temperature t j 150 storage temperature range t stg -55 150 note : h fe classification o:14 28
2008. 3. 26 2/2 MJE13009 revision no : 1
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